Product Summary

The MCZ33661EFR2 is a type of physical Layer component dedicated to automotive LIN sub-bus applications which offers slew rate selection for optimized operation at 10 kbps and 20 kbps, fast baud rate (above 100 kbps) for test and programming modes, excellent radiated emission performance, and safe behavior in the event of LIN bus short-to-ground or LIN bus leakage during low-power mode.

Parametrics

MCZ33661EFR2 absolute maximum ratings: (1): power supply voltage(VSUP):continuous supply voltage is 27V and transient voltage (load dump) is 40V; (2): wake DC and transient voltage (through a 33kΩ serial resistor)(VWAKE) is -18V to 40V; (3): logic voltage (RXD, TXD, EN Pins)(VLOG) is -0.3V to 5.5V; (4): LIN bus voltage(VBUS):DC voltage is -18V to 40V and transient (coupled through 1.0 nF capacitor) is -150V to 100V; (5): INH voltage/current:DC voltage(VINH) is -0.3 V to VSUP + 0.3 V and DC current(IINH) is 40mA; (6): ESD voltage:human body model: all pins is ±2000 and LIN pin with respect to ground is ±5000 while machine model is ±200.

Features

MCZ33661EFR2 features: (1)operational from VSUP 6.0V to 18V DC, functional up to 27 V DC and handles 40 V during load dump; (2)active bus waveshaping offering excellent radiated emission performance; (3)5.0kV ESD on LIN bus pin; (4)30 Kohms internal pullup resistor; (5)LIN bus short-to-ground or high leakage in sleep mode; (6)-18V to +40 V DC voltage at LIN pin; (7)8.0 uA in sleep mode; (8)local and remote wake-up capability reported by INH and RXD pins; (9)5.0V and 3.3 V compatible digital inputs without any external components required; (10)Pb-free packaging designated by suffix code EF.

Diagrams

MCZ33661EFR2 INTERNAL BLOCK DIAGRAM

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